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This paper details the modeling of a one-transistor dynamic random-access memory (1TDRAM) based on an independent double-gate device. A pseudo-2-D compact model of memory operations and dynamic behavior of data retention is proposed. The physical mechanisms involved are calculated through the accumulated charge in the body modulated by quantum effects related to thin silicon films. The resulting currents from programming operations are detailed. We consider current leakages, generation/recombination, and band-to-band tunneling parasitic effects for data retention.