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\hbox {ZrO}_{2} -Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application

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10 Author(s)
Qingyun Zuo ; Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China ; Long, Shibing ; Shiqian Yang ; Liu, Qi
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A memory cell based on n+-Si/ZrO2/Pt structure with self-rectifying properties is demonstrated for write-once-read-many-times (WORM) memory application. The fresh devices can be set to a low resistance state (LRS) as an antifuse and keep in LRS permanently with a rectification ratio exceeding 104. The memory devices show a large on/off ratio of about 106 and narrow resistance distributions before and after programming. The different transport mechanisms of forward and reverse currents are studied, which are responsible for this reliable self-rectifying characteristic. The demonstrated memory cell with self-rectifying properties has potential application in high-density passive crossbar WORM memory.

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Electron Device Letters, IEEE  (Volume:31 ,  Issue: 4 )