Skip to Main Content
Aging effects (such as Negative Bias Temperature Instability (NBTI)) can cause the temporal degradation of threshold voltage of transistors, and have become major reliability concerns for deep-submicron (DSM) designs. Meanwhile, leakage power dissipation becomes dominant in total power as technology scales. While multi-threshold voltage assignment has been shown as an effective way to reduce leakage, the NBTI-degradation rates vary with different initial threshold voltage assignment, and therefore motivates the co-optimizations of leakage reduction and NBTI mitigation. This paper minimizes leakage power during high-level synthesis of circuits with bounded delay degradation (thus guaranteed lifetime), using multi-Vth resource libraries. We first propose a fast evaluation approach for NBTI-induced degradation of architectural function units, and multi-Vth resource libraries are built with degradation characterized for each function unit. We then propose an aging-bounded high-level synthesis framework, within which the degraded delays are used to guide the synthesis, and leakage power is optimized through the proposed aging-aware resource rebinding algorithm. Experimental results show that, the proposed techniques can effectively reduce the leakage power with an extra 26% leakage reduction, compared to traditional aging-unaware multi-Vth assignment approach.