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A hole injection type InGaAs-InP near infrared photo-FET (HI-FET) is realized in which a small charge sensing FET is vertically mounted on a planar zinc diffused p-i-n photodiode (PD) with a low dark current. A simulation and actual device performance confirm the operating principle that involves photo-generated holes in the PD part being injected into the FET channel and converted into an electron flow with the equivalent charge. A HI-FET with excellent sensitivity of the order of several tens of femtowatts and an addressing function is demonstrated for highly sensitive infrared imaging devices of the future.
Date of Publication: April 2010