By Topic

A Compact Wideband CMOS Low Noise Amplifier With Gain Flatness Enhancement

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yueh-Hua Yu ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Yong-Sian Yang ; Yi-Jan Chen

This paper presents a compact 0.18-¿m CMOS wideband gain-flattened low noise amplifier (LNA). The low noise characteristic of the LNA is achieved by the noise canceling technique and the gain flatness is enhanced by the gate-inductive gain-peaking technique. In addition to extending flat-gain bandwidth, the proposed gain-peaking technique results in better wideband noise canceling and quick gain roll-off outside the desired signal band to reject interference. Without using any passive inductor, the core size of the fully-integrated CMOS LNA circuit is only 145 ¿ m × 247 ¿ m. The measured gain and noise figure of the CMOS LNA are 16.4 dB and 2.1 dB, respectively. The gain variation of the LNA is ±0.4 dB from 50 to 900 MHz. Operated at 1.8 V, the chip consumes 14.4 mW of power.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:45 ,  Issue: 3 )