By Topic

High-Performance Long-Wavelength Infrared HgCdTe Focal Plane Arrays Fabricated on CdSeTe Compliant Si Substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Priyalal S. Wijewarnasuriya ; U.S. Army Research Laboratory, Adelphi, USA ; Yuanping Chen ; Gregory Brill ; Bahram Zandi
more authors

At the U.S. Army Research Laboratory, a new ternary semiconductor system CdSexTe1-x,/Si(211) is being investigated as an alternative substrate to bulk-grown CdZnTe substrates for HgCdTe growth by molecular beam epitaxy. Long-wavelength (LW) photovoltaic devices fabricated on this compliant substrate material show diffusion limited performance at 78 K, indicating a high-quality material. The measured R0A at 78 K on ¿co = 10 ¿m material is on the order of 340 ¿ · cm2. In addition to single devices, we have fabricated 256 × 256 2-D arrays with a 40-¿m pixel pitch on LW-HgCdTe grown on CdSexTe1-x/Si(211) compliant substrates. The data show an excellent quantum efficiency operability of 99% at 78 K under a tactical background flux of 6.7 × 1015 ph/cm2s. The most probable dark current at peak distribution is 5.5 × 109 e-/s and is very consistent with the measured R0A values from single devices. This work demonstrates that CdSexTe1-x/Si(211) substrates provide a potential roadmap for more affordable robust third-generation focal plane arrays.

Published in:

IEEE Transactions on Electron Devices  (Volume:57 ,  Issue: 4 )