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Near-Infrared Ge-on-Si Power Monitors Monolithically Integrated on SOI Chips

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4 Author(s)
Lorenzo Colace ; NooEL-Nonlinear Optics and OptoElectronics Lab, Department of Electronic Engineering and CNISM, University ¿Roma Tre¿, Rome, Italy ; Vito Sorianello ; Marco Romagnoli ; Gaetano Assanto

We realize and test power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide photodetectors in evaporated germanium with front-end transimpedance amplifiers. The power monitors operate with signals as small as 10 nW, with errors below 0.2% and 2% at 1 and 0.1 ¿¿W , respectively.

Published in:

IEEE Photonics Technology Letters  (Volume:22 ,  Issue: 9 )