By Topic

Strained Single-Grain Silicon n- and p-Channel Thin-Film Transistors by Excimer Laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Baiano, A. ; Delft Inst. of Microsyst. & Nanoelectron., Delft Univ. of Technol., Delft, Netherlands ; Ishihara, R. ; van der Cingel, J. ; Beenakker, K.

We have investigated the carrier mobility enhancement of the n- and p-channel single-grain silicon thin-film transistors by the ??-Czochralski process at a low-temperature process (< 350??C). The high laser energy density near the ablation phenomenon that completely melts the grain filter during the crystallization is responsible for the high tensile strain of the silicon grains, which leads to carrier mobility enhancement.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 4 )