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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With {F}_{ \rm T} = \hbox {144} \hbox {GHz}

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8 Author(s)
Haifeng Sun ; Electromagn. Fields & Microwave Electron. Lab., ETH Zurich, Zurich, Switzerland ; Alt, A.R. ; Benedickter, H. ; Feltin, E.
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One-hundred-nanometer-gate (Al,In)N/GaN high-electron-mobility transistors (HEMTs) grown on semi-insulating SiC achieve a maximum current density of 1.84 A/mm at VGS = 0 V, an extrinsic transconductance of 480 mS/mm, and a peak current gain cutoff frequency as high as fT = 144 GHz, which is the highest so far reported for any (Al,In)N/GaN-based HEMT. This fT matches the best published values that we could find for 100-nm-gate (Al,Ga)N/GaN HEMTs, thus closing the cutoff frequency gap between (Al,In)N/GaN and (Al,Ga)N/GaN HEMTs. Additionally, similar devices grown on (111) high-resistivity silicon show a peak fT of 113 GHz, also setting a new performance benchmark for (Al,In)N/GaN HEMTs on silicon. Our findings indicate significant performance advantages for (Al,In)N/GaN HEMTs fabricated on SiC substrates. The improved performance for devices grown on SiC is derived from the superior transport properties of (Al,In)N/GaN 2DEGs grown on that substrate.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 4 )

Date of Publication:

April 2010

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