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Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane ( 11\bar{2}0 ) GaN Light-Emitting Diodes on Sapphire Substrate

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7 Author(s)
Kwang Hyeon Baik ; Optoelectronics Lab., Korea Electronics Technology Institute, Seongnam, Republic of Korea ; Yong Gon Seo ; Soon-Ku Hong ; Seogwoo Lee
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We report on the effects of basal stacking faults (BSFs) on the electrical anisotropy and the device characteristics of nonpolar a-plane GaN (1120) light-emitting diodes (LEDs) on r-plane (1102 ) sapphire substrates. The sheet resistance in the direction parallel to the c-axis [0001] is 18%-70% higher than the one in the direction parallel to the m-axis [1100 ]. The anisotropic conductivity of faulted a-plane GaN films can be explained by carrier scatterings from BSFs. It is also shown that the output power of nonpolar a-plane GaN LEDs are significantly influenced by the presence of BSFs, which laterally hampers the carrier transport in the n-GaN layer, especially in the direction parallel to the c-axis in faulted nonpolar nitride films.

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IEEE Photonics Technology Letters  (Volume:22 ,  Issue: 9 )