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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:22 Issue:10 Help

20-Gb/s 850-nm Oxide VCSEL Operating at 25 ^{\circ} C–70 ^{\circ} C

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4 Author(s)
Ji, Chen ; Fiber Opt. Product Div., Avago Technol., San Jose, CA, USA ; Wang, Jingyi ; Soderstrom, D. ; Giovane, L.

We report a small aperture 850-nm oxide vertical-cavity surface-emitting laser (VCSEL) operating at 20 Gb/s (pseudorandom bit sequence 31) 25??C-70??C with 5 dB extinction ratio. The VCSEL is designed to target anticipated 20-Gb/s transceiver module requirements, and is fabricated using production equipment including metal-organic chemical vapor deposition reactors for the growth of GaAs-AlGaAs epitaxy. We have characterized small signal modulation response properties in detail and obtained good agreement with finite element VCSEL simulation results. Preliminary accelerated lifetime testing indicated that the wear out lifetime would exceed 10 years for 70??C operations.

Published in:
Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 10 )

Date of Publication: May15, 2010

Page(s):
670 - 672
ISSN :
1041-1135
INSPEC Accession Number:
11229065
Digital Object Identifier :
10.1109/LPT.2010.2043667
Product Type:
Journals & Magazines
Date of Publication :
22 February 2010
Date of Current Version :
12 April 2010
Issue Date :
May15, 2010
Sponsored by :
IEEE Photonics Society

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