By Topic

20-Gb/s 850-nm Oxide VCSEL Operating at 25 ^{\circ} C–70 ^{\circ} C

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ji, Chen ; Fiber Opt. Product Div., Avago Technol., San Jose, CA, USA ; Wang, Jingyi ; Soderstrom, D. ; Giovane, L.

We report a small aperture 850-nm oxide vertical-cavity surface-emitting laser (VCSEL) operating at 20 Gb/s (pseudorandom bit sequence 31) 25??C-70??C with 5 dB extinction ratio. The VCSEL is designed to target anticipated 20-Gb/s transceiver module requirements, and is fabricated using production equipment including metal-organic chemical vapor deposition reactors for the growth of GaAs-AlGaAs epitaxy. We have characterized small signal modulation response properties in detail and obtained good agreement with finite element VCSEL simulation results. Preliminary accelerated lifetime testing indicated that the wear out lifetime would exceed 10 years for 70??C operations.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 10 )