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Performance of Flip-Chip Thin-Film GaN Light-Emitting Diodes With and Without Patterned Sapphires

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7 Author(s)

We report on improved device performance of flip-chip (FC) GaN-based light-emitting diodes (LEDs) by combining patterned sapphire substrate (PSS) and thin-film techniques. It was found that an FC LED grown on a conventional planar sapphire exhibits a power enhancement factor of only 36.3% after the thin-film processes of substrate removal and surface roughening. In contrast, the as-fabricated FC LED grown on a PSS showed a power enhancement factor of up to 62.3% without any postprocess as compared with the light output power of an original conventional FC LED. Further intensity improvement to 74.4% could be achieved for the FC LED/PSS sample with the thin-film processes.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 8 )

Date of Publication:

April15, 2010

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