Referenced Items are not available for this document.
An incremental poly etching method can improve the poly pimple defect-induced device mismatch on the static noise margin (SNM) of 65-nm-node low-power 6T-SRAM. The improvement on circuit level is examined by the yield of scan chain and memory built-in self-test (MBIST), which is known to correlate well to process-induced defects.
Published in:
Electron Devices, IEEE Transactions on
(Volume:57
,
Issue:
4
)
Date of Publication: April 2010
- Page(s):
- 956 - 959
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 11204247
- Digital Object Identifier :
- 10.1109/TED.2010.2041285
- Product Type:
- Journals & Magazines
- Date of Publication :
- 22 February 2010
- Date of Current Version :
- 22 March 2010
- Issue Date :
- April 2010
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
