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Temperature stable Ba xSr1-xTiO 3 thin film structures for microwave devices

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5 Author(s)
Schmidgall, E. ; Dept. of Mater., Imperial Coll. London, London, UK ; Walters, R.A. ; Centeno, A. ; Petrov, P.K.
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Bilayer structures of Ba0.25Sr0.75TiO3/Ba0.75Sr0.25TiO3 were deposited in-situ on MgO substrates using pulsed laser deposition. To investigate the electrical properties, interdigital capacitor structures were patterned on the top of the film using photolithography followed by ion-milling processes. The capacitance and the tunability of the structures were measured between 100 and 400 K in the frequency range 1 to 3 GHz. The temperature coefficient of capacitance was evaluated and compared against the same structure patterned on a Ba0.5Sr0.5TiO3 thin film. The dielectric constant of the thin film was evaluated using a conformal transformation. It was seen that the bilayer structure had a much improved temperature coefficient of capacitance but a lower dielectric constant.

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Electronics Letters  (Volume:46 ,  Issue: 4 )