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The asymmetric scenario of random dopants distributed near source and drain sides in 16 nm MOSFETs' channel has been advanced using a statistically sound 3D mixed-mode "atomistic" simulation technique. The device with dopants near drain side exhibits less characteristic fluctuations due to the well controlled of major fluctuation source, Cgd, by drain bias. The fluctuations of average gate capacitance, circuit gain, 3db bandwidth, and unity-gain bandwidth for the cases with dopants positioned near source are substantially larger than those with dopants near drain. The result of this study is insightful for problem of random distribution of discrete impurities on device performance.