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Characterization of a single resonant charge in a silicon nanowire device

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6 Author(s)
Pierre, M. ; DRFMC, CEA-Grenoble, Grenoble, France ; Jehl, X. ; Sanquer, M. ; Vinet, M.
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We investigate the time-dependent transport properties of two very asymmetric coupled quantum dots: a single resonant charge and an electrometer made of a gated silicon nanowire in the Coulomb blockade regime. The occupation probability of the charge trap is obtained by noise measurements. We observe the predicted smearing of the Coulomb peaks at the resonance, the back-action of the electrometer on the single charge as well as a relatively large dip in the charging energy of the whole system.

Published in:

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Date of Conference:

15-16 June 2008