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It is intriguing that silicon, the material at the heart of modem classical electronics, also has properties that are well suited to quantum electronics. These properties include weak spin-orbit coupling and the existence of zero-nuclear spin isotopes. This synergy between quantum and classical properties offers the possibility that silicon quantum dots potentially could be used as quantum bits, if high-quality, extremely stable devices can be fabricated and measured. In this talk, we will present data demonstrating silicon/silicon-germanium quantum dots containing individual electrons. Single-electron occupation is confirmed through the use of integrated charge sensing. We will also present measurements of Si/SiGe double quantum dots, in which we have recently observed Pauli spin blockade aÂ¿Â¿Â¿ the suppression of transport current through a double quantum dot due to long lived spin states. Reversing the flow of current leads to a new effect in which long spin lifetimes enhance, rather than suppress, the flow of current through the double dot.
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Date of Conference: 15-16 June 2008