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Flash memory device characteristics of atomic layer deposited crystallite Al2O3 films with large memory window and long retention

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4 Author(s)
Maikap, S. ; Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan ; Banerjee, W. ; Rahaman, S.Z. ; Das, A.

Enhanced non-volatile memory device characteristics of crystallite Al2O3 film (¿900°C) with a large hysteresis memory window of ¿V ¿ 9.8 V under a gate voltage of ±15 V have been observed due to crystallization of the Al2O3 film. The hysteresis memory window of ¿V ¿ 3.8 V under a gate voltage of ±10 V is also observed. Both program and erase speeds of ¿V~2.6V@1s are achieved under Fowler-Nordheim injections. A large memory window of ¿V ¿ 4.0 V after ~2×l06s of retention (~30% charge loss) is obtained. The high-performance ALD crystallite Al2O3 flash memory devices can be operated at ¿10V.

Published in:
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Date of Conference: 15-16 June 2008

Page(s):
1 - 2
Print ISBN:
978-1-4244-2071-1
INSPEC Accession Number:
11145924
Conference Location :
Honolulu, HI
Digital Object Identifier :
10.1109/SNW.2008.5418388
Product Type:
Conference Publications

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