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Enhanced non-volatile memory device characteristics of crystallite Al2O3 film (Â¿900Â°C) with a large hysteresis memory window of Â¿V Â¿ 9.8 V under a gate voltage of Â±15 V have been observed due to crystallization of the Al2O3 film. The hysteresis memory window of Â¿V Â¿ 3.8 V under a gate voltage of Â±10 V is also observed. Both program and erase speeds of Â¿V~2.6V@1s are achieved under Fowler-Nordheim injections. A large memory window of Â¿V Â¿ 4.0 V after ~2Ãl06s of retention (~30% charge loss) is obtained. The high-performance ALD crystallite Al2O3 flash memory devices can be operated at Â¿10V.
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Date of Conference: 15-16 June 2008