Flash memory device characteristics of atomic layer deposited crystallite Al2O3 films with large memory window and long retention

Enhanced non-volatile memory device characteristics of crystallite Al
₂
O
₃
film (¿900°C) with a large hysteresis memory window of ¿V ¿ 9.8 V under a gate voltage of ±15 V have been observed due to crystallization of the Al
₂
O
₃
film. The hysteresis memory window of ¿V ¿ 3.8 V under a gate voltage of ±10 V is also observed. Both program and erase speeds of ¿V~2.6V@1s are achieved under Fowler-Nordheim injections. A large memory window of ¿V ¿ 4.0 V after ~2×l0
⁶
s of retention (~30% charge loss) is obtained. The high-performance ALD crystallite Al
₂
O
₃
flash memory devices can be operated at ¿10V.