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Program/erase model of NAND-type nitride-based charge trapping flash memories

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2 Author(s)
Doo-Hyun Kim ; Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea ; Park, Byung-Gook

In this paper, the authors developed the P/E model of NAND-type nitride-based charge trapping flash memories with transient ONO field, tunneling currents, trapped charge density and threshold voltage shift. The simulated results show acceptable V¿ shift operation of SONOS NAND flash memory using FN and direct tunneling in P/E process. This modeling works account for the V¿ shift as a function of applied gate voltage, time, and thickness of silicon oxide and silicon nitride layers and can be used for optimizing the ONO geometry and parameters for maximum performance.

Published in:

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Date of Conference:

15-16 June 2008