By Topic

Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Crupi, I. ; MATIS, CNR-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Via Santa Sofia 64, Catania I-95123, Italy ; Mirabella, S. ; DAngelo, D. ; Gibilisco, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The double sign anomaly of the Hall coefficient has been studied in p-doped and n-doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition and annealed up to 500 °C. Dark conductivity as a function of temperature has been measured, pointing out a conduction mechanism mostly through the extended states. Anomalous Hall effect has been observed only in the as-deposited n-doped film, disappearing after annealing at 500 °C, while p-doped samples exhibit normal Hall effect. When Hall anomaly is present, a larger optical band gap and a greater Raman peak associated with Si–H bond are measured in comparison with the cases of normal Hall effect. The Hall anomaly will be related to the hydrogen content and implication on photovoltaic applications will be discussed.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 4 )