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100-mW high-power angled-stripe superluminescent diodes with a new real refractive-index-guided self-aligned structure

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6 Author(s)
Takayama, T. ; Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan ; Imafuji, O. ; Kouchi, Y. ; Yuri, M.
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We have developed 100-mW high-power angled-stripe superluminescent diodes with a new angled-stripe real refractive-index guided self-aligned structure. The structure has a GaAlAs optical confinement layer on a planar active layer and an inclined current injection stripe by 5° with respect to the facet normal. The structure gives small internal loss (~10 cm-1) and facet power reflectivity less than the order of 10-6. As a result, the output power as high as 105 mW at a low operating current of 270 mA is obtained with less than 3% spectral modulation and 10.5 nm full width at half maximum (FWHM) spectral width

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 11 )

Date of Publication:

Nov 1996

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