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Tuning characteristics of monolithic passively mode-locked distributed Bragg reflector semiconductor lasers

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4 Author(s)
Hai-Feng Liu ; Dept. of Electr. Eng., Melbourne Univ., Parkville, Vic., Australia ; Arahira, S. ; Kunii, T. ; Ogawa, Y.

Tuning characteristics of multicontact passively mode-locked distributed Bragg reflector (DBR) semiconductor lasers are investigated in terms of center wavelengths and pulse repetition frequencies. It is shown that the center wavelength of the pulses can be tuned over a wide range by changing the refractive index of the Bragg reflector section either by means of carrier injection or by thermal effects while maintaining the pulses to be nearly transform-limited. Tuning of the pulse repetition rates is realized by using four different approaches, i.e., current injection to a passive phase-control section, varying of the reverse bias to the absorber, varying of the injection current to the gain region, and thermal effects. Injecting current into the phase-control region results in a tuning range of more than 400 MHz while maintaining the pulses at transform-limited condition. Varying the reverse bias voltage to the absorber is shown to be an alternative to achieve large repetition rate tuning, by which a tuning range of 600 MHz is obtained. By combining these tuning schemes, a total tuning range of more than 1 GHz is realized

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Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 11 )