By Topic

3.5-mm-square InGaAs p-i-n photodiodes and their application to optical-axis arrangement between 1.3-μm laser diodes and a SMF

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kuhara, Y. ; Opto-Electron. R&D Labs., Sumitomo Electr. Ind. Ltd., Osaka, Japan ; Fujimura, V. ; Terauchi, H. ; Yamabayashi, N.

InGaAs p-i-n photodiodes (PD) with 3.5-mm×3.5-mm-large photosensitive area have been fabricated using chlorine-vapor-phase-epitaxial (C-VPE) growth. They showed high responsivity of 0.95 A/W (λ=1.3 μm) and 1.2 A/W (λ=1.55 μm) and good homogeneity in the whole area. Long-term reliability was confirmed through high-temperature aging tests at 150°C up to 5200 hours. A PD with two pairs of parallel electrodes (PE-PD) was applied to optical-axis arrangement between 1.3-μm laser diodes (LD's) and a single mode fibre (SMF). The beam position of a LD was detected in error within ±20 μm using PE-PD prior to coupling of a LD beam into a SMF. Total inspection time was reduced to one third the original time

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 11 )