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An improvement method for the reliability of copper metallization process

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3 Author(s)
Po-Ying Chen ; Dept. of Inf. Eng., I-Shou Univ., Dashu Township, Taiwan ; Po-Han Wu ; Woei Jye Ong

In this study, a capping layer was deposited after CMP polish when finish the SiO2 layer. These interrelated problems can be solved with a proper fabrication process strategy. This effective strategy will eliminate copper extrusion using in many semiconductor processes. Stronger interface reduce the diffusion of Cu through IMD.

Published in:

Electronics Packaging Technology Conference, 2009. EPTC '09. 11th

Date of Conference:

9-11 Dec. 2009