By Topic

Millimeter wave dielectric characterization & demonstration of High-Q passives using a low loss thin film material

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Lim Ying Ying ; Institute of Microelectronics, A¿STAR (Agency for Science, Technology, and Research), 11 Science Park Road, Singapore Science Park II, Singapore 117685 ; Nandar Su ; David Ho Soon Wee ; Phyo Phyo Thaw
more authors

In this paper, we demonstrate the extraction of the effective dielectric properties of a new low-k thin film material, up to the millimeter wave region (110 GHz). This is achieved using a CPWG T-resonator. In literature, such a configuration has not been considered before, as a 50-Ohm structure is usually designed for the T-resonator. In this work, we show that using a non-50 Ohm structure has no influence on the extracted effective dielectric constant, which can be achieved within an accuracy of 4% up to 110 GHz. In addition, we investigate the effects of temperature variation on the thin film dielectric property. High-Q inductors were also designed on high-resistivity silicon and glass substrates.

Published in:

Electronics Packaging Technology Conference, 2009. EPTC '09. 11th

Date of Conference:

9-11 Dec. 2009