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In this paper, we demonstrate the extraction of the effective dielectric properties of a new low-k thin film material, up to the millimeter wave region (110 GHz). This is achieved using a CPWG T-resonator. In literature, such a configuration has not been considered before, as a 50-Ohm structure is usually designed for the T-resonator. In this work, we show that using a non-50 Ohm structure has no influence on the extracted effective dielectric constant, which can be achieved within an accuracy of 4% up to 110 GHz. In addition, we investigate the effects of temperature variation on the thin film dielectric property. High-Q inductors were also designed on high-resistivity silicon and glass substrates.