By Topic

Modeling and analysis of coupling between TSVs, metal, and RDL interconnects in TSV-based 3D IC with silicon interposer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Kihyun Yoon ; Terahertz Interconnection & Package Lab., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea ; Gawon Kim ; Woojin Lee ; Taigon Song
more authors

In this paper, we present a lumped element model for coupled interconnect structures of TSV, metal interconnects, and Redistribution Layer (RDL) in Through-Silicon-Via (TSV)-based 3D IC with silicon interposer. We also analyzed the electrical characteristic of coupling between 3D silicon interposer interconnects. The equivalent lumped model is derived and verified with the S-parameter measurement results. The lumped model for TSV, metal, and RDL combined interconnects is verified with the EM solver simulation results. The S-parameter from the proposed model shows good agreement with the result from the measurement and simulation up to 20 GHz. We also proposed shielding structures to suppress coupling between silicon interposer interconnects.

Published in:

Electronics Packaging Technology Conference, 2009. EPTC '09. 11th

Date of Conference:

9-11 Dec. 2009