Modeling and analysis of coupling between TSVs, metal, and RDL interconnects in TSV-based 3D IC with silicon interposer

In this paper, we present a lumped element model for coupled interconnect structures of TSV, metal interconnects, and Redistribution Layer (RDL) in Through-Silicon-Via (TSV)-based 3D IC with silicon interposer. We also analyzed the electrical characteristic of coupling between 3D silicon interposer interconnects. The equivalent lumped model is derived and verified with the S-parameter measurement results. The lumped model for TSV, metal, and RDL combined interconnects is verified with the EM solver simulation results. The S-parameter from the proposed model shows good agreement with the result from the measurement and simulation up to 20 GHz. We also proposed shielding structures to suppress coupling between silicon interposer interconnects.