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Analytical Study of Low-Field Diffusive Transport in Highly Asymmetric Bilayer Graphene Nanoribbon

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2 Author(s)
Sitangshu Bhattacharya ; Nano-Scale Device Research Laboratory, Centre for Electronics Design and Technology, Indian Institute of Science, Bangalore, India ; Santanu Mahapatra

We present a simplified theory of carrier backscattering coefficient in a twofold degenerate asymmetric bilayer graphene nanoribbon (BGN) under the application of a low static electric field. We show that for a highly asymmetric BGN (Δ = γ), the density of states in the lower subband increases more that of the upper, in which Δ and γ are the gap and the interlayer coupling constant, respectively. We also demonstrate that under the acoustic phonon scattering regime, the formation of two distinct sets of energy subbands signatures a quantized transmission coefficient as a function of ribbon width and provides an extremely low carrier reflection coefficient for a better Landauer conductance even at room temperature. The well-known result for the ballistic condition has been obtained as a special case of the present analysis under certain limiting conditions which forms an indirect validation of our theoretical formalism.

Published in:

IEEE Transactions on Nanotechnology  (Volume:10 ,  Issue: 3 )