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The temporal responses of the undoped, n-type, and p-type /spl delta/-doped GaAs metal-semiconductor-metal photodetectors were systematically studied. The full-width at half-maximum of the temporal response is significantly improved at low bias for the /spl delta/-doped detectors compared to the conventional undoped one. The p-type /spl delta/-doped detector exhibits the smallest fall-time, and hence the highest bandwidth, because the induced electric field in the absorption region facilitates the transport of the photo-generated holes. In addition, the p-type /spl delta/-doped detector also gives the highest peak amplitude of the temporal response. Two dimensional simulation on the internal electrical field distribution in the detectors is consistent with the experimental results.
Date of Publication: Nov. 1996