Referenced Items are not available for this document.
This paper presents a pseudo-2-D surface potential model for the double-gate tunnel field-effect transistor (DG-TFET). Analytical expressions are derived for the 2-D potential, electric field, and generation rate, and used to numerically extract the tunneling current. The model predicts the device characteristics for a large range of parameters and allows gaining insight on the device physics. The depletion regions induced inside the source and drain are included in the solution, and we show that these regions become critical when scaling the device length. The fringing field effect from the gates on these regions is also included. The validity of the model is tested for devices scaled to 10-nm length with SiO2 and high-¿ dielectrics by comparison to 2-D finite-element simulations.
Published in:
Electron Devices, IEEE Transactions on
(Volume:57
,
Issue:
4
)
Date of Publication: April 2010
- Page(s):
- 827 - 834
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 11204254
- Digital Object Identifier :
- 10.1109/TED.2010.2040661
- Product Type:
- Journals & Magazines
- Date of Publication :
- 17 February 2010
- Date of Current Version :
- 22 March 2010
- Issue Date :
- April 2010
- Sponsored by :
- IEEE Electron Devices Society
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