Referenced Items are not available for this document.
We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 cm2/ V??s, threshold voltages of - 0.30 V, turn-on voltages of -1.50 V, on/off ratios of 109, and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs.
Published in:
Electron Device Letters, IEEE
(Volume:31
,
Issue:
4
)
Date of Publication: April 2010
- Page(s):
- 311 - 313
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 11204370
- Digital Object Identifier :
- 10.1109/LED.2010.2040130
- Product Type:
- Journals & Magazines
- Date of Publication :
- 17 February 2010
- Date of Current Version :
- 22 March 2010
- Issue Date :
- April 2010
- Sponsored by :
- IEEE Electron Devices Society
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