By Topic

Evanescent Semiconductor Active Optical Isolators for Low Insertion Loss and High Gain Saturation Power

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Shimizu, H. ; Dept. of Electr. & Electron. Eng., Tokyo Univ. of Agric. & Technol., Tokyo, Japan ; Goto, S.

We have designed evanescent semiconductor active optical isolators to realize lower forward transparent current in transverse electric (TE) mode integrable semiconductor active optical isolators with 9.3 dB/mm optical isolation. Evanescent semiconductor active optical isolators are composed of a semiconductor optical amplifier waveguide with an InGaAsP waveguide layers having an Fe layer at its sidewall upon an MQW active layer, allowing TE-mode optical isolation to be realized without etching the MQW active layer unlike conventional TE-mode semiconductor active optical isolators. Evanescent-mode optical isolators enable higher internal quantum efficiency and lower transparent current, compared with conventional TE-mode optical isolators. Furthermore, it was found that the evanescent-mode optical isolators had higher 3 dB saturation output power.

Published in:

Lightwave Technology, Journal of  (Volume:28 ,  Issue: 9 )