By Topic

Simple Matrix-Method Modeling for Avalanche Photodetectors With Arbitrary Layer Structures and Absorption/Multiplication Coefficients

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Daoxin Dai ; Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA ; John E. Bowers

A simple matrix-method model is presented for calculating the impedance and the short-circuit frequency response of an avalanche photodiode (APD) with arbitrary layer structures and absorption/multiplication coefficients. In our matrix method model, the depletion region of the APD is divided into many thin layers. In each thin layer the absorption and the multiplication coefficients are assumed to be uniform. As an example, we use this matrix-method model to analyze in detail a resonant Ge/Si SACM (separated absorption charge multiplication) APD. The impedance analysis shows that the avalanche region is equivalent to an LCR-circuit including a negative resistance, an inductance with a series resistance, and a capacitance in parallel connection. At higher bias voltages, the negative resistance and series resistance become very small and consequently the LCR circuit shows a strong resonance. Furthermore, the inductance also becomes smaller at higher bias voltages, which introduces a higher resonance frequency. This increases the 3 dB-bandwidth, in agreement with experiment.

Published in:

Journal of Lightwave Technology  (Volume:28 ,  Issue: 9 )