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Microwave Performance of \hbox {InAlAsSb/In}_{0.35} \hbox {Ga}_{0.65}\hbox {Sb/InAlAsSb} Double Heterojunction Bipolar Transistors

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4 Author(s)
Mairiaux, E. ; Inst. d''Electron., de Microelectron. et de Nanotechnol., Villeneuve-d''Ascq, France ; Desplanque, L. ; Wallart, X. ; Zaknoune, M.

In this letter, we report on high-speed InAlAsSb/InGaSb/InAlAsSb double heterojunction bipolar transistors (HBTs) (DHBT) fabricated using a conventional triple-mesa process. Current gain cutoff frequencies fT of 52 GHz and maximum oscillation frequencies fMAX of 48 GHz were extracted from measured scattering parameters for devices with 1 ??15 ??m2 emitter size. To the best of our knowledge, these results are the first RF performance ever reported, and they demonstrate the feasibility and potential of InGaSb-based HBT for high-speed electronics applications.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 4 )