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In this letter, we report on high-speed InAlAsSb/InGaSb/InAlAsSb double heterojunction bipolar transistors (HBTs) (DHBT) fabricated using a conventional triple-mesa process. Current gain cutoff frequencies fT of 52 GHz and maximum oscillation frequencies fMAX of 48 GHz were extracted from measured scattering parameters for devices with 1 ??15 ??m2 emitter size. To the best of our knowledge, these results are the first RF performance ever reported, and they demonstrate the feasibility and potential of InGaSb-based HBT for high-speed electronics applications.