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Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power

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7 Author(s)
Walpole, J.N. ; Lincoln Lab., MIT, Lexington, MA, USA ; Donnelly, J.P. ; Groves, S.H. ; Missaggia, L.J.
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Diode lasers have been fabricated in InGaAsP-InP multiple-quantum-well material grown by atmospheric-pressure organometallic vapor-phase epitaxy with an active optical cavity consisting of a ridge-waveguide region coupled to a tapered gain region. Over 1 W of CW output power was obtained with 85% of the power in the central lobe of a diffraction-limited far-field radiation pattern.

Published in:

Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 11 )