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Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

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12 Author(s)
Sangwon Lee ; Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea ; Sungwook Park ; Sungchul Kim ; Yongwoo Jeon
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An extraction technique for subgap density of states (DOS) in an n-channel amorphous InGaZnO thin-film transistor (TFT) by using multifrequency capacitance-voltage (C -V) characteristics is proposed and verified by comparing the measured I- V characteristics with the technology computer-aided design simulation results incorporating the extracted DOS as parameters. It takes on the superposition of exponential tail states and exponential deep states with characteristic parameters for N TA = 1.1 ?? 1017 cm-3 ?? eV-1, N DA = 4 ?? 1015 cm-3 ?? eV-1, kT TA = 0.09 eV, and kT DA = 0.4 eV. The proposed technique allows obtaining the frequency-independent C-V curve, which is very useful for oxide semiconductor TFT modeling and characterization, and considers the nonlinear relation between the energy level of DOS and the gate voltage V GS. In addition, it is a simple, fast, and accurate extraction method for DOS in amorphous InGaZnO TFTs without optical illumination, temperature dependence, and numerical iteration.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 3 )

Date of Publication:

March 2010

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