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Effects of residual copper selenide on CuInGaSe2 solar cells

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6 Author(s)
Tung-Po Hsieh ; Photovoltaics Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan, 310, R.O.C. ; Chia-Chih Chuang ; Chung-Shin Wu ; Jen-Chuan Chang
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Large grain and copper-poor CuInGaSe2 (CIGS) film is preferred to fabricate high efficiency solar cells. However, the degradation caused by excess copper selenide (Cu2-xSe) is still a problem. This study investigates the formation and behavior of excess CuxSe and further compares the cell performances between typical copper-poor and copper-rich solar cells. As the excess Cu2-xSe can not be exhaust during the growth, the excess Cu2-xSe fully surrounded by the polycrystalline CIGS grain. The CIGS film with excess Cu2-xSe would result in serious shunt paths and poor PN junction. A short circuit in the copper-rich CIGS solar cells can be attributed to the conductive Cu2-xSe. For high efficiency cells, the best way is to exhaust Cu2-xSe during the growth. Or otherwise a dense CIGS film with chemical treatments is necessary to avoid the negative effects of the excess Cu2-xSe.

Published in:

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Date of Conference:

7-12 June 2009