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Measurements of thermoelectric power (Â¿) and electrical resistivity (Â¿) were made at room temperature on filamentary samples of CuInSe2 (stoichiometric) and CuInSe2.2 (excess Se), Bridgman-grown with added elemental sodium in the melt in the amounts of 0, 0.1, 0.2, 0.5, 1, 2 and 3 at. %. In the CuInSe2 + Na samples, conversion from p- to n-type occurred between 0.2 and 0.5 at. % Na, yielding electron concentrations of the order of 1016 cm-3. By contrast, the CuInSe2.2 + Na samples remained p-type at all the sodium addition levels, yielding hole concentrations of the order of 1018 cm-3. In the important range 0 to 0.5 at. % Na, where sample brittleness is less of a problem than for higher additions, no major changes occurred in hole mobility or resistivity but a small increase in Â¿p and a small decrease in Â¿ was apparent at 0.1 at. % Na.