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Comparative study of low-temperature PECVD Of amorphous silicon using mono-, di-, trisilane and cyclohexasilane

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6 Author(s)
Pokhodnya, K. ; Center for Nanoscale Sci. & Eng., North Dakota State Univ., Fargo, ND, USA ; Sandstrom, J. ; Olson, C. ; Xuliang Dai
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The hydrogenated amorphous silicon a-Si:H films were grown by plasma-enhanced chemical vapor deposition (PECVD) using liquid cyclohexasilane Si6H12 (CHS). The growth rate of a-Si:H was studied as a function of substrate temperatures in the range of 30 °C<T<450°C using deposition conditions that were optimized for monosilane SiH4. The same parameters were used for a- Si:H films grown using disilane (Si2H6) and trisilane (Si3H8) precursors. It was found that the a-Si:H film growth rate of CHS is lower with respect to those of mono-, di- and trisilane in an Ar plasma. Addition of ~10% of H2 dramatically increases the deposition rate for CHS-based films about 700% to 8 ¿/sec. The as-deposited films were characterized by FTIR and Raman spectroscopy to probe the hydrogen content and local bonding environment. It was found that the films grown using Ar/H2 mixtures as carrier gas have a reduced hydrogen content relative to polysilane fragments indicating higher quality amorphous silicon.

Published in:

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Date of Conference:

7-12 June 2009