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Atomic layer deposited ultra thin HfO2 and Al2O3 interfacial layers for high performance Dye Sensitized Solar Cells

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4 Author(s)
Shanmugam, Mariyappan ; Dept. of Electr. Eng. & Comput. Sci., South Dakota State Univ., Brookings, SD, USA ; Baroughi, M.F. ; Galipeau, D. ; Ropp, M.

This paper presents the possibility of improving the performance of dye sensitized solar cells (DSSCs) by treating the mesoporous TiO2 using ultra thin metal oxides such as hafnium oxide (HfO2) and aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) method. Ultrathin HfO2 and Al2O3 (few nm in thickness) metal oxide layers affect the density and activity of the interface states at the TiO2/dye/electrolyte interfaces and hence affect the overall performance of DSSCs. Different thicknesses of HfO2 and Al2O3 layers (5, 10 and 20 ALD cycles) were deposited on the mesoporous TiO2 surface prior to dye loading process in fabrication of DSSCs. It was observed that the ALD deposition of ultrathin oxides can significantly improve the performance of DSSCs. Further, it was also observed that the improvement in the DSSC performance highly depends on the thickness of the ALD deposited HfO2 and Al2O3 films. Compared to a reference DSSC, which did not use an ALD interfacial layer, incorporation of a HfO2 (5 cycles) and Al2O3 (20 cycles) layers resulted in enhancement of 69 and 10% % enhancement respectively.

Published in:

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Date of Conference:

7-12 June 2009

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