By Topic

Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Choe, Minhyeok ; Department of Nanobio Materials and Electronics, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea ; Jo, Gunho ; Maeng, Jongsun ; Hong, Woong-Ki
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We investigated the electronic properties of ZnO nanowire combined with the scaled high-k Al2O3 dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al2O3 dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler–Nordheim tunneling. The ZnO nanowire FETs with Al2O3 dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al2O3 dielectric layer thickness.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 3 )