By Topic

Scaling consideration and compact model of electron scattering enhancement due to acoustic phonon modulation in an ultrafine free-standing cylindrical semiconductor nanowire

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hattori, J. ; Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan and SORST JST, 4-1-8 Hon-machi, Kawaguchi, Saitama 333-0012, Japan ; Uno, Shigeyasu ; Nakazato, K. ; Mori, N.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We theoretically investigate the interaction between modulated acoustic phonons and electrons in a free-standing cylindrical semiconductor nanowire and calculate the electron mobility limited by modulated acoustic phonons in a [001]-oriented silicon nanowire (SiNW) at room temperature. The mobility is smaller than that limited by bulk phonons because form factors increase due to acoustic phonon modulation. By expressing the form factor increase through an analytical formula, we derive a compact formula for mobility that is valid for a nanowire in which most electrons occupy the lowest subband, regardless of the wire material. The compact formula achieves excellent accuracy for a [001]-oriented SiNW with a radius of less than 2 nm at an electron density of 2×109 m-1, and its applicable radius increases with decreasing electron density

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 3 )