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Scaling consideration and compact model of electron scattering enhancement due to acoustic phonon modulation in an ultrafine free-standing cylindrical semiconductor nanowire

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4 Author(s)
Hattori, J. ; Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan and SORST JST, 4-1-8 Hon-machi, Kawaguchi, Saitama 333-0012, Japan ; Uno, Shigeyasu ; Nakazato, K. ; Mori, N.

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We theoretically investigate the interaction between modulated acoustic phonons and electrons in a free-standing cylindrical semiconductor nanowire and calculate the electron mobility limited by modulated acoustic phonons in a [001]-oriented silicon nanowire (SiNW) at room temperature. The mobility is smaller than that limited by bulk phonons because form factors increase due to acoustic phonon modulation. By expressing the form factor increase through an analytical formula, we derive a compact formula for mobility that is valid for a nanowire in which most electrons occupy the lowest subband, regardless of the wire material. The compact formula achieves excellent accuracy for a [001]-oriented SiNW with a radius of less than 2 nm at an electron density of 2×109 m-1, and its applicable radius increases with decreasing electron density

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 3 )