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Enhanced optical power and low forward voltage of GaN-based light-emitting diodes with Ga-doped ZnO transparent conducting layer

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8 Author(s)
Park, Tae-Young ; Department of Materials Science and Engineering, Nanophotonic Semiconductors Laboratory, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea ; Choi, Yong-Seok ; Kang, Jang-Won ; Jeong, Jae-Ho
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Ga-doped ZnO (ZnO:Ga) films were grown by metalorganic chemical vapor deposition as transparent conducting layers for GaN light-emitting diodes (LEDs). The forward voltage of LEDs with ZnO:Ga was 3.3 V at 20 mA. The low forward voltage was attributed to the removal of a resistive ZnGa2O4 phase, decreased resistivity of ZnO:Ga films, and increased hole concentration in p-GaN by thermal annealing process. The light output power of LEDs with ZnO:Ga was increased by 25% at 20 mA compared to that of LEDs with Sn-doped indium oxide due to the enhanced transmittance and the increased hole concentration in p-GaN.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 5 )