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A 3.1-10.6 GHz RF CMOS circuits monolithically integrated with dipole antenna

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6 Author(s)
Masayuki Ikebe ; Hokkaido University, Sapporo, Japan ; Daisuke Ueo ; Kazuhiro Takahagi ; Masaki Ohuno
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Transmitter, receiver antennas, and other components monolithically integrated with CMOS LSIs are in high demand as a means of reducing the cost of wireless equipment. For the first step, an RF frontend (low-noise-amplifier [LNA] and mixer) has been designed for use in the 3.1 to 10.6-GHz band compatible with multi-band OFDM UWB all group spectrum allocation. We clarify the design methodology of antennas on lossy Si substrates. The RF circuits with the antenna were fabricated using a 0.18-¿m CMOS process. Measured total gain with 50-cm air interface is about -40 dB in the above band.

Published in:

Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on

Date of Conference:

13-16 Dec. 2009