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Complementation SCR for RF IC ESD protection

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6 Author(s)
Dong, S. ; Dept. of ISEE, Zhejiang Univ., Hangzhou, China ; Li, M. ; Guo, W. ; Han, Y.
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Complementation silicon controlled rectifiers (CSCRs) with various novel layouts are designed in 0.18 ??m RF CMOS process, including general CSCR, strip CSCR (SCSCR), island-strip CSCR (ISCSCR) and island-block CSCR (IBCSCR). SCSCR has highest FOM; however, the ISCSCR has lowest parasitic capacitance. Appropriate division layout of the CSCRs should be addressed to achieve a balance between active area capacitance and edge capacitance.

Published in:

Electronics Letters  (Volume:46 ,  Issue: 3 )