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Use of Laser to Explain Heavy Ion Induced SEFIs in SDRAMs

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6 Author(s)
Bougerol, A. ; EADS IW, Eur. Aeronaut. Defense & Space Co., Suresnes, France ; Miller, F. ; Guibbaud, N. ; Gaillard, R.
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In this work, using heavy ion and pulsed laser tests on a 110 nm 256 Mbit SDRAM, different SEFI types and other logic-related radiation effects are studied and explained. Effects seen using heavy ions were reproduced and localized on the die with the laser. Among the effects, Fuse-Latch Upsets were found to be responsible of typical addressing errors and were more particularly investigated. Moreover, an unusual logic-related effect, called SET in Voltage Buffer, was induced using heavy ions, and localized afterward with the laser. Soft SEFI and Hard SEFI were also investigated.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:57 ,  Issue: 1 )

Date of Publication:

Feb. 2010

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