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Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories

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6 Author(s)
Irom, F. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Nguyen, D.N. ; Bagatin, M. ; Cellere, G.
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Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena were investigated: single effect upsets (SEUs), single effect functional interrupts (SEFIs), and a new high current phenomenon which at high LETs results in catastrophic loss of ability to erase and program the device.

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Nuclear Science, IEEE Transactions on  (Volume:57 ,  Issue: 1 )