By Topic

Development of a Monolithic Active Pixel Sensor Using SOI Technology With a Thick Device Layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Marczewski, J. ; Inst. of Electron Technol., Warsaw, Poland ; Grabiec, P. ; Kucharski, K. ; Tomaszewski, D.
more authors

Monolithic active pixel detectors fabricated in SOI (silicon on insulator) technology are novel sensors of ionizing radiation which exploit SOI substrates for the integration of readout electronics with a pixel detector. The fully-depleted sensing diode is manufactured under the SOI buried oxide (BOX) in the volume of the `handle wafer', while readout circuitry occupies the upper silicon SOI `device layer'. However, the initial prototypes suffered from significant leakage currents and early breakdown of pixel diodes. These effects limited the production yield. Moreover, the p-wells within the device layer extended to the interface with the BOX, which caused some local potential wells below the BOX at the top of the depleted sensor area. As a result, the effective charge collection efficiency was significantly decreased. This paper describes a solution for these problems employing a thicker 4 ¿m SOI device layer. The use of this detector structure has increased the effective charge collection efficiency to over 99%.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:57 ,  Issue: 1 )