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Multichip module technology with a copper-polyimide thin-film multilayer substrate

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4 Author(s)
S. Yamaguchi ; NTT Interdisciplinary Res. Labs., Tokyo, Japan ; H. Tomimuro ; Y. Ohno ; S. Hino

This paper describes an advanced multichip module (MCM) constructed of a copper-polyimide thin-film multilayer MCM substrate, a compact package, and a high-lead-count connector for the MCM. The signal line in the MCM substrate was designed to be 25 μm wide and 10 μm thick to enable the transmission of pulses at several Gb/s. The dielectric thickness between the power and ground layers in the ceramic substrate was designed to be 50 μm, restricting simultaneous switching noise. The AlN ceramic package enabled sufficiently low chip-to-air thermal resistance of approximately 6.0°C/W in spite of the compact size of 20 mm square. The connector was designed to provide a characteristic impedance of 50 Ω. Prototype ATM switching modules successfully operated at about 700 MHz

Published in:

Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International

Date of Conference:

4-6 Dec 1995