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High-Performance a-IGZO TFT With \hbox {ZrO}_{2} Gate Dielectric Fabricated at Room Temperature

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4 Author(s)
Jae Sang Lee ; Center for Energy Mater. Res., Korea Inst. of Sci. & Technol., Seoul, South Korea ; Seongpil Chang ; Sang-Mo Koo ; Lee, Sang Yeol

We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO2 gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. ZrO2 is one of the most promising high-k materials. The a-IGZO TFT (channel W/L = 240/30 ??m) with ZrO2 shows high performance such as high on current of 2.11 mA and high field effect mobility of 28 cm2/(V??s) at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 3 )

Date of Publication:

March 2010

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